【Final Model in Series, Top-of-the-Line, Excellent Condition】SONY TA-F555ESJ Integrated Amplifier

SONY TA-F555ESJ Integrated Amplifier

This is the top-of-the-line, final model in SONY's heavyweight TA-F555ES series of integrated amplifiers, developed during the golden age of audio.
(It evolved through ESX, ESR, ESD, ESG, ESL, ESA, and finally ESJ.)
This masterpiece set itself apart from its rivals with cutting-edge technology and a generous use of high-quality components.
If it were to be manufactured today, it would undoubtedly be extremely expensive.
Its powerful output delivers a feeling of driving large speakers with ease.
The large speaker terminals impressively symbolize its capabilities.
120W + 120W (8Ω), original price ¥165,000.
Weighing 24.6kg, caution is advised for those with back problems.

Operation and sound output have been confirmed, but as this is a used item, no warranty can be provided after sale.
There is a slight crackle when switching between Source Direct and the Muting switch, but as these functions are rarely used, it should not be an issue in practical use.
Being a used item, there are minor, inconspicuous scratches and slight dirt, but overall it is in beautiful condition.
Remote control is not included.

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The output stage utilizes newly developed, non-magnetic, audio-specific Power MOS FETs. Power MOS FETs are MOS FETs, originally developed as small-signal switching devices, that have been adapted to enable high-power amplification while retaining their excellent high-frequency characteristics and switching speed.
These devices reduce the burden on the driver stage, allowing for high sound quality with a relatively simple circuit configuration, and have the advantage of minimizing negative impacts on sound quality.
Two pairs of these Power MOS FETs, a total of eight units, are used in the output stage for each channel. Furthermore, MOS FETs are also employed in the voltage amplification stage and driver stage, achieving an all-FET amplifier configuration from input to output.

The chassis structure features the G-chassis, designed for thorough vibration and resonance elimination, suppressing external vibrations and internal vibrations generated by the power supply unit, significantly reducing modulation noise caused by vibration and resonance.
The top panel is also made of the same material as the G-chassis.

A newly developed volume control is used, featuring low-distortion printed resistors and a non-magnetic, gold-plated sliding contact brush.

Brass-machined, gold-plated pin jack terminals and large, gold-plated speaker terminals are used.

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